Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 6, 2012, Pages 1277-1281

  Nahm, Ho Hyun ^a   Kim, Yong Sung ^a   Kim, Dae Hwan ^b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

Amorphous oxide semiconductors; Density functional theory; Instability

Indexed keywords

CHEMICAL BONDS; DEFECTS; GROUND STATE; MOLECULAR ORBITALS; OXIDATION; OXIDE SEMICONDUCTORS; PEROXIDES; PLASMA STABILITY; STABILITY;

AMORPHOUS OXIDE SEMICONDUCTOR (AOS); AMORPHOUS OXIDE SEMICONDUCTORS; CARRIER-MEDIATED; ELECTRONIC GROUND STATE; HYBRID DENSITY FUNCTIONAL THEORY; LATTICE INSTABILITY; METASTABILITIES; STRUCTURAL TRANSITIONS;

DENSITY FUNCTIONAL THEORY;

EID: 84862229103     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201147557     Document Type: Article

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