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Volumn 99, Issue 2, 2011, Pages

Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; GATE INSULATOR; LOW PROCESS TEMPERATURE; NEGATIVE GATE; NOVEL STRATEGIES; POSITIVE CHARGES; STABILITY ENHANCEMENT; STABLE OXIDES; STRESS STABILITY; ULTRA-THIN;

EID: 79960482790     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3610476     Document Type: Article
Times cited : (36)

References (21)
  • 1
    • 79960509399 scopus 로고    scopus 로고
    • International Meeting on Information Display
    • H. D. Kim, J.-S. Park, Y.-G. Mo, and S. S. Kim, International Meeting on Information Display, 35 (2009).
    • (2009) , pp. 35
    • Kim, H.D.1    Park, J.-S.2    Mo, Y.-G.3    Kim, S.S.4
  • 10
    • 28344453533 scopus 로고    scopus 로고
    • Oxygen vacancies in ZnO
    • DOI 10.1063/1.2053360, 122102
    • A. Janotti and C. G. Van de Walle, Appl. Phys. Lett. 87, 122102 (2005). 10.1063/1.2053360 (Pubitemid 41717369)
    • (2005) Applied Physics Letters , vol.87 , Issue.12 , pp. 1-3
    • Janotti, A.1    Van De Walle, C.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.