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Volumn 95, Issue 23, 2009, Pages

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

Author keywords

[No Author keywords available]

Indexed keywords

HUMID ENVIRONMENT; INDIUM ZINC OXIDES; NEGATIVE BIAS; NEGATIVE V; PHOTON IRRADIATION; THERMAL INSTABILITIES;

EID: 71949092733     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3272015     Document Type: Article
Times cited : (325)

References (15)
  • 2
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    • K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 0028-0836 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
    • (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 5
    • 34548684568 scopus 로고    scopus 로고
    • High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
    • DOI 10.1063/1.2783961
    • J. K. Jeong, J. H. Jeong, H. W. Yang, J. -S. Park, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951 91, 113505 (2007). 10.1063/1.2783961 (Pubitemid 47416041)
    • (2007) Applied Physics Letters , vol.91 , Issue.11 , pp. 113505
    • Jeong, J.K.1    Jeong, J.H.2    Yang, H.W.3    Park, J.-S.4    Mo, Y.-G.5    Kim, H.D.6
  • 6
    • 33846070644 scopus 로고    scopus 로고
    • Investigating the stability of zinc oxide thin film transistors
    • DOI 10.1063/1.2425020
    • R. B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 0003-6951 89, 263513 (2006). 10.1063/1.2425020 (Pubitemid 46058083)
    • (2006) Applied Physics Letters , vol.89 , Issue.26 , pp. 263513
    • Cross, R.B.M.1    De Souza, M.M.2
  • 9
    • 38549145327 scopus 로고    scopus 로고
    • Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
    • DOI 10.1063/1.2824758
    • A. Suresh and J. F. Muth, Appl. Phys. Lett. 0003-6951 92, 033502 (2008). 10.1063/1.2824758 (Pubitemid 351160654)
    • (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 033502
    • Suresh, A.1    Muth, J.F.2
  • 15
    • 39749191514 scopus 로고    scopus 로고
    • Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
    • DOI 10.1063/1.2838380
    • J. -S. Park, J. K. Jeong, H. -J. Chung, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951 92, 072104 (2008). 10.1063/1.2838380 (Pubitemid 351304848)
    • (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 072104
    • Park, J.-S.1    Jeong, J.K.2    Chung, H.-J.3    Mo, Y.-G.4    Kim, H.D.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.