Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

  Nomura, Kenji ^a   Kamiya, Toshio ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONSTANT CURRENT STRESS; DEEP DEFECTS; HIGH DENSITY; LIGHT ILLUMINATION; NEGATIVE BIAS; PASSIVATION LAYER; SURFACE LAYERS;

AMORPHOUS FILMS; DEFECTS; GALLIUM; PASSIVATION; THIN FILM DEVICES; THIN FILM TRANSISTORS; ZINC;

SURFACE DEFECTS;

EID: 80051578933     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3622121     Document Type: Article

References (12)

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