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Volumn 96, Issue 26, 2010, Pages

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

(8) Chen, Yu Chun a Chang, Ting Chang a,b Li, Hung Wei c Chen, Shih Ching a Lu, Jin a Chung, Wan Fang c Tai, Ya Hsiang c Tseng, Tseung Yuen c

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT OXYGEN; DYNAMIC STRESS; ELECTRICAL CHARACTERISTIC; EXPONENTIAL EQUATIONS; GATE BIAS; GATE-BIAS STRESS; OXYGEN ADSORPTION; OXYGEN PRESSURE; RECOVERY PHASE; RECOVERY TIME; ZINC TIN OXIDE;

ACTIVATION ENERGY; OXYGEN; RECOVERY; THIN FILM TRANSISTORS; THIN FILMS; TIN; TITANIUM COMPOUNDS; ZINC;

GAS ADSORPTION;

EID: 77954343096 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3457996 Document Type: Article

Times cited : (144)

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