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Volumn 39, Issue 1, 2008, Pages 625-628

World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; LIQUID CRYSTAL DISPLAYS; SEMICONDUCTING INDIUM COMPOUNDS; SILICON COMPOUNDS; THRESHOLD VOLTAGE; WET ETCHING;

EID: 54549120323     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069740     Document Type: Conference Paper
Times cited : (233)

References (7)
  • 1
    • 32244438612 scopus 로고    scopus 로고
    • Sang Soo Kim, The World's Largest (82-in) TFT-LCD, SID05 Digest, p. 1842, 2005.
    • Sang Soo Kim, "The World's Largest (82-in) TFT-LCD", SID05 Digest, p. 1842, 2005.
  • 2
    • 34547951107 scopus 로고    scopus 로고
    • Transparent Amorphous Oxide Semiconductors for High Performance TFT
    • Hideo Hosono, "Transparent Amorphous Oxide Semiconductors for High Performance TFT", SID'07, Dig., pp. 1830, 2007.
    • (2007) SID'07, Dig , pp. 1830
    • Hosono, H.1
  • 3
    • 54549100594 scopus 로고    scopus 로고
    • Myeon-Chang Sung et al., Novel Backplane for AM-OLED Device, IMID 07 Digest, pp. 133-136, 2007.
    • Myeon-Chang Sung et al., "Novel Backplane for AM-OLED Device", IMID 07 Digest, pp. 133-136, 2007.
  • 4
    • 54549086943 scopus 로고    scopus 로고
    • J.K. Jeong et al., 4.1-inch Transparent QCIF AMOLED Display Driven by High Mobility Bottom Gate a-IGZO Thinfilm Transistors, IMID 07 Digest, pp. 145-148, 2007.
    • J.K. Jeong et al., "4.1-inch Transparent QCIF AMOLED Display Driven by High Mobility Bottom Gate a-IGZO Thinfilm Transistors", IMID 07 Digest, pp. 145-148, 2007.
  • 5
    • 33751080721 scopus 로고    scopus 로고
    • Kah-Yoong chan et al., Influence of contact effect on the performance of of microcrystalline silicon thin film transistors, APL.89, 203509, 2006.
    • Kah-Yoong chan et al., "Influence of contact effect on the performance of of microcrystalline silicon thin film transistors", APL.89, 203509, 2006.
  • 6
    • 0038650905 scopus 로고    scopus 로고
    • Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination
    • APL.93, pp
    • Jana Zaumseil et al., "Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination", APL.93, pp. 6117-6124, 2003.
    • (2003) , pp. 6117-6124
    • Zaumseil, J.1
  • 7
    • 29044441257 scopus 로고    scopus 로고
    • Passivation of zinc-tin-oxide thin-film transistors
    • David Hong et al., "Passivation of zinc-tin-oxide thin-film transistors", J. Vac. Sci. Technol. B23(6), L25-L27, 2005.
    • (2005) J. Vac. Sci. Technol , vol.B23 , Issue.6
    • Hong, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.