Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

Applied Physics Letters

Volumn 101, Issue 12, 2012, Pages

  Migliorato, Piero ^a,b   Delwar Hossain Chowdhury, Md ^a   Gwang Um, Jae ^a   Seok, Manju ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AMORPHOUS NETWORKS; BIAS STRESS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CAPACITANCE-VOLTAGE CURVE; CURRENT VOLTAGE; DENSITY OF STATE; INDIUM GALLIUM ZINC OXIDES; IONIZED STATE; NEGATIVE BIAS; STRESS TIME; TRANSITION ENERGY;

AMORPHOUS SEMICONDUCTORS; IONIZATION; THIN FILM TRANSISTORS; THIN FILMS;

FILM THICKNESS;

EID: 84866846934     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752238     Document Type: Article

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