Comparative study on light-induced bias stress instability of igzo transistors with SiNx and SiO2 gate dielectrics

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1404-1406

  Ji, Kwang Hwan ^a   Kim, Ji In ^a   Mo, Yeon Gon ^b   Jeong, Jong Han ^b   Yang, Shinhyuk ^c   Hwang, Chi Sun ^c   Park, Sang Hee Ko ^c   Ryu, Myung Kwan ^d   Lee, Sang Yoon ^d   Jeong, Jae Kyeong ^a  

^a Inha University   (South Korea)

^b Samsung Mobile Display Co   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

a InGaZnO; amorphous semiconductor; bias stability; multicomponent oxide semiconductor; thin film transistors (TFTs)

Indexed keywords

A-INGAZNO; BIAS STABILITY; BIAS STRESS; BIAS TEMPERATURE INSTABILITY; CHARGE TRAPPING MECHANISMS; COMPARATIVE STUDIES; HOLE CARRIERS; HOLE TRAPPING; LIGHT ILLUMINATION; MULTI-COMPONENT OXIDES; NEGATIVE BIAS;

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS; SILICON NITRIDE; STABILITY;

THIN FILM TRANSISTORS;

EID: 78649446577     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2073439     Document Type: Article

References (16)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004.
2. 4 channel fabricated by room temperature rf-magnetron sputtering," Appl. Phys. Lett., vol. 89, no. 11, p. 112 123, Sep. 2006.
3. x etch stopper," Appl. Phys. Lett., vol. 90, no. 21, p. 212 114, May 2007.
4. J. K. Jeong, H.-J. Chung, Y.-G. Mo, and H. D. Kim, "Comprehensive studies on the transport mechanism of amorphous InGaZnO transistors," J. Electrochem. Soc., vol. 155, no. 11, pp. H873-H877, Sep. 2008.
5. K.-H. Lee, J. S. Jung, K. S. Son, J. S. Park, T. S. Kim, R. Choi, J. K. Jeong, J.-Y. Kwon, B. Koo, and S. Lee, "The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors," Appl. Phys. Lett., vol. 95, no. 23, p. 232 106, Dec. 2009.
6. J.-Y. Kwon, K. S. Son, J. S. Jung, K.-H. Lee, J. S. Park, T. S. Kim, K. H. Ji, R. Choi, J. K. Jeong, B. Koo, and S. Lee, "The impact of device configuration on the photon-enhanced negative bias thermal instability of GaInZnO thin film transistors," Electrochem. Solid-State Lett., vol. 13, no. 6, pp. H213-H215, Jun. 2010.
7. J.-Y. Kwon, K. S. Son, J. S. Jung, K.-H. Lee, J. S. Park, T. S. Kim, K. H. Ji, R. Choi, J. K. Jeong, B. Koo, and S. Lee, "Investigation of light-induced bias instability in Hf-In-Zn-O thin film transistor: Cation combinatorial approach," unpublished.
8. 3 gate insulator grown by atomic layer deposition," Appl. Phys. Lett., vol. 94, no. 12, p. 142 107, Apr. 2009.
9. 2 gate dielectric fabricated at room temperature," IEEE Electron Device Lett., vol. 31, no. 3, pp. 225-227, Mar. 2010.
10. R. B. M. Cross and M. M. De Souza, "Investigating the stability of zinc oxide thin film transistors," Appl. Phys. Lett., vol. 89, no. 26, p. 263 513, Dec. 2006.
11. Y. Vygranenko, K. Wang, and A. Nathan, "Stable indium oxide thin-film transistors with fast threshold voltage recovery," Appl. Phys. Lett., vol. 91, no. 26, p. 263 508, Dec. 2007.
12. J. K. Jeong, H. W. Yang, J. H. Jeong, Y.-G. Mo, and H. D. Kim, "Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistor," Appl. Phys. Lett., vol. 93, no. 12, p. 123 508, Sep. 2008.
13. J. Kanicki and S. Martin, Thin-Film Transistor, C. Kagan and P. Andry, Eds. New York: Marcel Dekker, 2003.
14. P. Gorrn, M. Lehnhardt, T. Riedl, and W. Kowalsky, "The influence of visible light on transparent zinc tin oxide thin film transistors," Appl. Phys. Lett., vol. 91, no. 19, p. 193 504, Nov. 2007.
15. Y.-N. Tan, W.-K. Chim, B. J. Cho, and W.-K. Choi, "Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer," IEEE Trans. Electron Devices, vol. 51, no. 7, pp. 1143-1147, Jul. 2004.
16. 0.5 thin film," Thin Solid Films, vol. 518, no. 4, pp. 1079-1081, Dec. 2009.