Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layer

IEEE Transactions on Electron Devices

Volumn 51, Issue 7, 2004, Pages 1143-1147

  Tan, Yan Ny ^a   Chim, Wai Kin ^a   Cho, Byung Jin ^a   Choi, Wee Kiong ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM ALUMINUM OXIDE; HAFNIUM OXIDE; HIGH DIELECTRIC CONSTANT; OVER ERASE;

CAPACITANCE MEASUREMENT; CAPACITORS; HAFNIUM COMPOUNDS; MOSFET DEVICES; PERMITTIVITY; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 4344661847     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.829861     Document Type: Article

References (9)

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