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Volumn 100, Issue 16, 2012, Pages

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150°C

(9) Yeob Park, Se a Hwan Ji, Kwang a Yoon Jung, Hong a Kim, Ji In a Choi, Rino a Seok Son, Kyoung b Kwan Ryu, Myung b Lee, Sangyoon b Kyeong Jeong, Jae a

a Inha University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; DEVICE PERFORMANCE; EFFECT OF OXYGEN; HIGH-PRESSURE ANNEALING; OXYGEN VACANCY DEFECTS; POSITIVE BIAS; SATURATION MOBILITY; SUBTHRESHOLD; THIN-FILM TRANSISTOR (TFTS); TIN DOPED INDIUM OXIDE;

ANNEALING; HIGH PRESSURE EFFECTS; OXYGEN; THIN FILM TRANSISTORS; TIN;

PHOTOCURRENTS;

EID: 84859983888 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4704926 Document Type: Article

Times cited : (56)

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