First-principles study of native point defects in crystalline indium gallium zinc oxide

Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

  Omura, Hideyuki ^a   Kumomi, Hideya ^a   Nomura, Kenji ^b   Kamiya, Toshio ^b   Hirano, Masahiro ^b   Hosono, Hideo ^b  

^a CANON INC   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ATOMIC ARRANGEMENT; ATOMIC STRUCTURE; BAND GAPS; CHANNEL LAYERS; CONDUCTION-BAND MINIMUM; DEFECT LEVELS; DEFECT-FREE; DFT BAND GAP; ELECTRICAL PROPERTY; ELECTRONIC STRUCTURE CALCULATIONS; ELECTRONS AND HOLES; FIRST-PRINCIPLES STUDY; INDIUM GALLIUM ZINC OXIDES; INTERSTITIAL HYDROGEN; INTERSTITIAL OXYGEN; INTERSTITIAL SITES; LATTICE OXYGEN; N-CHANNEL; OCTAHEDRAL INTERSTITIAL SITE; UNOCCUPIED STATE; VALENCE-BAND MAXIMUMS;

ATOMS; CHEMICAL BONDS; CRYSTALLINE MATERIALS; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; INDIUM; OXYGEN; POINT DEFECTS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS; STRONTIUM COMPOUNDS; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

OXYGEN VACANCIES;

EID: 67449108542     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3089232     Document Type: Article

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