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Applied Physics Letters

Volumn 97, Issue 2, 2010, Pages

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

(4) Ryu, Byungki a Noh, Hyeon Kyun a Choi, Eun Ae a Chang, K J a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ELECTRON CAPTURE; HOLE ACCUMULATION; NEGATIVE BIAS; NEGATIVE GATE; PHOTOEXCITED HOLES; POTENTIAL BARRIERS; ROOM TEMPERATURE;

GALLIUM; PHASE INTERFACES; THIN FILM TRANSISTORS; THIN FILMS; ZINC;

AMORPHOUS FILMS;

EID: 77955160907 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3464964 Document Type: Article

Times cited : (416)

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