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Volumn 97, Issue 11, 2010, Pages

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

(8) Ghaffarzadeh, Khashayar a Nathan, Arokia a Robertson, John b Kim, Sangwook c Jeon, Sanghun c Kim, Changjung c Chung, U In c Lee, Je Hun d

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

d SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; DENSITY CHANGE; DIELECTRIC STACK; ELECTRICAL BIAS; IN-FIELD; INDIUM ZINC OXIDES; LIGHT STRESS; NATURAL RECOVERY; PERSISTENT PHOTOCONDUCTIVITY; SHORTER WAVELENGTH; SUB-THRESHOLD BEHAVIOR; THRESHOLD VOLTAGE SHIFTS; TIME-SCALES;

AMORPHOUS FILMS; AMORPHOUS SILICON; DEFECT DENSITY; HAFNIUM; HAFNIUM OXIDES; INDIUM; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC;

BIAS VOLTAGE;

EID: 77956853370 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3480547 Document Type: Article

Times cited : (131)

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