The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 77-81

  Kim, Sangwook ^a   Kim, Sunil ^a   Kim, Changjung ^a   Park, Jaechul ^a   Song, Ihun ^a   Jeon, Sanghun ^a   Ahn, Seung Eon ^a   Park, Jin Seong ^b   Jeong, Jae Kyeong ^c  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Dankook University   (South Korea)

^c Inha University   (South Korea)

Author keywords

Bias instability; InGaZnO; Photon irradiation; Thin film transistor

Indexed keywords

BIAS INSTABILITY; BLUE LIGHT; COMPENSATION EFFECTS; ELECTRON CARRIER; GATE BIAS; GREEN LIGHT; INGAZNO; META-STABLE; NEGATIVE BIAS; NEGATIVE V; PHOTON ENERGY; PHOTON EXCITATIONS; PHOTON IRRADIATION; POSITIVE BIAS; VISIBLE LIGHT;

GALLIUM; INDIUM; IRRADIATION; PHOTONS; STABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

TRANSISTORS;

EID: 79957953431     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.014     Document Type: Article

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