Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO) 5 films

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1993-1995

  Nomura, Kenji ^a,b   Kamiya, Toshio ^b   Ohta, Hiromichi ^a   Ueda, Kazushige ^b   Hirano, Masahiro ^a   Hosono, Hideo ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; FERMI LEVEL; FILM PREPARATION; GRAIN BOUNDARIES; HALL EFFECT; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; STOICHIOMETRY; THIN FILMS;

CARRIER TRANSPORT; HALL MOBILITY; ROOM TEMPERATURE (RT); TRANSPARENT OXIDE SEMICONDUCTORS (TOS);

SEMICONDUCTING FILMS;

EID: 5444268548     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1788897     Document Type: Article

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