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F. Dahlquist, J. O. Svedberg, C. M. Zetterling, M. Ostling, B. Breitholtz, and H. Lendenmann, "A 2.8 kV, forward drop JBS diode with low leakage", Materials Science Forum, vol. 338, pp. 1179-1182, 2000.
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Materials Science Forum
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44
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84906666072
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45
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84906719665
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Presented at 2001 European Silcon Carbide and Related Materials confirence
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H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P. A. Nilsson, J. P. Bergman, and P. Skytt, "Long term operation of 4.5kV PiN and 2.5kV JBS diodes", Presented at 2001 European Silcon Carbide and Related Materials confirence, 2001.
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Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
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Lendenmann, H.1
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Nilsson, P.A.5
Bergman, J.P.6
Skytt, P.7
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46
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84906666073
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Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan
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H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, "Characteristics, Reliability, and Relation to material Defects", Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan, 2001.
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Characteristics, Reliability, and Relation to Material Defects
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Lendenmann, H.1
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47
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84906719666
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Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan
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Y. Li, J. A. Cooper, and M. A. Capano, "High Performance UMOSFETs on 4H-SiC", Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan, 2001.
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Li, Y.1
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48
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84906719667
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Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan
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Y. Sugawara, K. Asano, D. Takayama, S. Ryu, R. Singh, J. Palmour, and T. Hayashi, "5.0kV 4H-SiC SEMOSFET with Low RonS of 88mWcm", Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan, 2001.
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5.0kV 4H-SiC SEMOSFET with Low RonS of 88mWcm
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Sugawara, Y.1
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49
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S. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, "1800 V NPN bipolar junction transistors in 4H-SiC", IEEE Electron Device Letters, vol. 22, pp. 124-126, 2001.
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IEEE Electron Device Letters
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Ryu, S.1
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50
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0034449648
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SiC power devices with low on-resistance for fast switching applications
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P. Friedrichs, H. Mitlehner, K. O. Dohnke, D. Peters, R. Schorner, U. Weinert, E. Baudelot, and D. Stephani, "SiC power devices with low on-resistance for fast switching applications", 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings, pp. 213-216, 2000.
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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings
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Friedrichs, P.1
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Weinert, U.6
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51
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84906702712
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Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan
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P. Friedrichs, "Application Oriented Unipolar SiC Switching Devices.", Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan, 2001.
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Application Oriented Unipolar SiC Switching Devices
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Friedrichs, P.1
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52
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Electron. Letters
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53
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57th Annual Device Research Conference Digest
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57
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84906702710
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Presented at the International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan
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Large Area (3.3mm 3.3mm) Power MOSFETs in 4H-SiC.
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IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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58th DRC. Device Research Conference. Conference Digest
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62
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IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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64
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66
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(2001)
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Materials Science Forum
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