SiC MISFETs with MBE-grown AlN gate dielectric

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Zetterling, C M ^a,b   Ostling M ^a   Yano, H ^b   Kimoto, T ^b   Matsunami, H ^b   Linthicum, K ^c   Davis, R F ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b KYOTO UNIVERSITY   (Japan)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ION IMPLANTATION; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SUBSTRATES;

GATE DIELECTRICS; INVERSION LAYER MOBILITY;

MISFET DEVICES;

EID: 0343878029     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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