Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 130-132

  Fedison, Jeffrey B ^a,b   Ramungul, Nudjarin ^a,d   Paul Chow, T ^a,c   Ghezzo, Mario ^a,b   Kretchmer, James W ^b  

^a IEEE   (United States)

^b GE GLOBAL RESEARCH   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d Ministry of Industry   (Thailand)

Author keywords

High voltage; Ion implantation; Junction rectifier; Reverse recovery; Silicon carbide

Indexed keywords

CURRENT VOLTAGE MEASUREMENT; JUNCTION RECTIFIES; REVERSE RECOVERY MEASUREMENT; SURFACE RECOMBINATION VELOCITY; VOLTAGE DROP;

ANODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SWITCHING; VOLTAGE MEASUREMENT;

ELECTRIC RECTIFIERS;

EID: 0035279453     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910619     Document Type: Article

References (10)

1. SiC and GaN power devices
2. 6.2kV 4H-SiC pin diode with low forward voltage drop
3. Switching behavior of fast high voltage SiC pin diodes
4. Boron-implanted 6H-SiC diodes
5. Carrier generation and recombiation in P-N junctions and P-N junction characteristics
6. Current due to recombination via multilevel centers in the space charge layer of a p-n structure
7. Determination of carrier lifetime from rectifier ramp recovery waveform
8. +n diodes measured by reverse recovery switching transient analysis