Static and dynamic characteristics of 4-6 kV 4H-SiC SIAFETs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 41-44

  Takayama, D ^a   Sugawara, Y ^a   Hayashi, T ^a   Singh, R ^a   Palmour, J ^a   Ryu, S ^a   Asano, K ^a  

^a KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; MOSFET DEVICES; POWER ELECTRONICS; SILICON CARBIDE;

SWITCHING SPEEDS;

MOS DEVICES;

EID: 0034829321     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)