Thermal stability in vacuum and in air of Al/Ni/W based ohmic contacts to p-type SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Liu, Sam ^a   Potts, Gregory ^a   Scofield, James ^b  

^a UNIVERSITY OF DAYTON   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; AIR; ALUMINUM; ELECTRIC CONDUCTIVITY OF SOLIDS; GOLD; NICKEL; OXIDATION RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMODYNAMIC STABILITY; TUNGSTEN; VACUUM;

CONTACT RESISTIVITY;

OHMIC CONTACTS;

EID: 18844475252     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. th International High Temp. Elect. Conf. (1998), p. 79.
2. H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns., J. Appl. Phys. 76 (1994), p. 1363.
3. th International High Temp. Elect. Conf. (1998), p. 88.
4. I. Eisgruber, J. Engel, R. Hollingsworth, and P. Bhat, Vacuum & Thinfilm (1999), p. 21.