2.7 kV epitaxial lateral power DMOSFETs in 4H-SiC

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 127-128

  Spitz, J ^a   Melloch, M R ^a   Cooper Jr , J A ^a   Melnychuk, G ^a   Saddow, S E ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES; THRESHOLD VOLTAGE;

LATERAL DOUBLE IMPLANTED MOSFET; SPECIFIC ON RESISTANCE DROP; THRESHOLD VOLTAGE DROP;

MOSFET DEVICES;

EID: 0033645249     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/drc.2000.877117     Document Type: Article

References (3)