SiC device edge termination using finite area argon implantation

IEEE Transactions on Electron Devices

Volumn 44, Issue 6, 1997, Pages 1013-1017

  Alok, Dev ^a   Jay Ant Baliga, B ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ARGON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ION IMPLANTATION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

BIAS VOLTAGES;

SILICON CARBIDE;

EID: 0031164554     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.585559     Document Type: Article

References (10)

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