Invited-progress in high power SiC microwave MESFETs

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1999, Pages 321-324

  Allen, S T ^a   Pribble, W L ^a   Sadler, R A ^a   Alcorn, T S ^a   Ring, Z ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; GATES (TRANSISTOR); HETEROJUNCTIONS; MICROWAVE DEVICES; SEMICONDUCTOR DIODES; SILICON CARBIDE; SUBSTRATES;

BREAKDOWN VOLTAGE; MICROWAVE SILICON CARBIDE MESFET;

MESFET DEVICES;

EID: 0033363970     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)