High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Applied Physics Letters

Volumn 75, Issue 15, 1999, Pages 2268-2270

  Khan, F A ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000725696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124986     Document Type: Article

References (6)

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