SiC-power rectifiers

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Held, R ^a   Fullmann M ^a   Niemann, E ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); JUNCTION BARRIER SCHOTTKY DIODES (JBS);

SOLID STATE RECTIFIERS;

EID: 0342572432     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. R. Held, N. Kaminski, E. Niemann, Materials Science Forum Vois. 264-268 (1998), p. 1057-1060
2. nd European Conference on Silicon Carbide and Related Materials 1998, to be published
3. At the Forschungszentrum Rossendorf, Inst. f. Ionenstrahlphysik und Materialforschung, Dresden
4. EUPEC BSM15GD60DL/BSM50GB60DE