High-voltage accumulation-layer UMOSFET's in 4H-SiC

IEEE Electron Device Letters

Volumn 19, Issue 12, 1998, Pages 487-489

  Tan, J ^a,b   Cooper Jr , J A ^a,c   Melloch, M R ^a,c  

^a PURDUE UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c IEEE

Author keywords

MOS devices; Power MOSFET's; Power semiconductor devices; Power transistors; Silicon carbide

Indexed keywords

ELECTRIC RESISTANCE MEASUREMENT; EPITAXIAL GROWTH; ION IMPLANTATION; OXIDATION; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; VOLTAGE MEASUREMENT;

BLOCKING VOLTAGE; HIGH-VOLTAGE ACCUMULATION LAYERS;

MOSFET DEVICES;

EID: 0032302935     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.735755     Document Type: Article

References (13)

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