High performance C plus Al co-implanted 5000V 4H-SiC P+iN diode

Electronics Letters

Volumn 37, Issue 8, 2001, Pages 531-532

  Alexandrov, P ^a   Tone, K ^a   Luo, Y ^a   Zhao, J H ^a   Burke, T ^b   Pan, M ^c   Weiner, M ^c  

^a RUTGERS UNIVERSITY   (United States)

^b US Army TACOM   (United States)

^c UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

EPITAXIAL LAYER; MULTISTEP JUNCTION ETENSION TERMINATION; SILICON CARBIDE DIODE; SILICON CARBIDE DRIFT LAYER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035848741     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010322     Document Type: Article

References (4)

1. SCHOEN, K. WOODALL, J.M., COOPER, J.A., and MELLOCH, M.R.: 'Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers', IEEE Trans. Electron Devices, 1998, 45, pp. 1595-1604
2. TONE, K., ZHAO, J.H., WEINER, M., and PAN, M.: 'Fabrication and testing of 1.000V 4H-SiC MPS diodes in an inductive half-bridge circuit', Mater. Sci. Forum. 2000, 338-342, pp. 1187-1190
3. FEDISON, J.B., LI, Z., KHEMKA, V., RAMUNGUL, N., CHOW, T.P., GHEZZO, M., KRETCHMER, J.W., and ELASSER, A.: 'Al/C/B co-implanted high-voltage 4H-SiC PiN junction rectifiers', Mater. Sci. Forum. 2000, 338-342, pp. 1367-1370
4. SUGAWARA, Y., ASANO, K., SINGH, R., and PALMOUR, J.W.: '6.2kV 4H-SiC pin diode with low forward voltage drop', Mater. Sci. Forum. 2000, 338-342, pp. 1371-1374