High-power P-channel UMOS IGBT's in 6H-SiC for high temperature operation

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Ryu, Sei Hyung ^a   Singh, Ranbir ^a   Palmour, John W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; HIGH TEMPERATURE EFFECTS; MOS DEVICES; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; VOLTAGE MEASUREMENT;

BLOCKING VOLTAGE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0343442326     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. B. J. Baliga, Power Semiconductor Devices, 1996 PWS Publishing Company, p.426.
2. th IEEE Annual Device Research Conference, June 24-26, 1996, Santa Barbara, CA.
3. th IEEE Annual Device Research Conference, June 28-30, 1999, Santa Barbara, CA.
4. W. J. Schaffer, G. H. Negley, K. G. Irvine, and J. W. Palmour, Mater. Res. Soc. Proc., Vol. 339 (1994), p.595
5. L. A. Lipkin, D. B. Slater, Jr., and J. W. Palmour, Mat. Sci. For. 264-9 (1998), p. 853.
6. A. K. Agarwal, J. B. Casady, L. B. Lowland, W. F. Valek, M. H. White, and C. D. Brandt, IEEE Electron Dev. Letts. 18 (1997), p. 589