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Volumn 37, Issue 8, 2001, Pages 528-530

GaN/AlGaN HEMTs operating at 20GHz with continuous-wave power density > 6W/mm

(9) Moon, J S a Micovic, M a Janke, P a Hashimoto, P a Wong, W S a Widman, R D b McCray, L a Kurdoghlian, A a Nguyen, C a

a Hughes Aircraft Co (United States)

b BOEING COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; HIGH ELECTRON MOBILITY TRANSISTORS; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SILICON WAFERS; TRANSCONDUCTANCE;

ALUMINUM GALLIUM NITRIDE TRANSISTORS; CONTINUOUS WAVE POWER DENSITY; DRAIN CURRENT DENSITY; GALLIUM NITRIDE TRANSISTORS; POWER ADDED EFFICIENCY; SILICON CARBIDE WAFER; SOURCE DRAIN SPACING;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035848669 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20010370 Document Type: Article

Times cited : (67)

References (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.