2.8 kV, forward drop JBS diode with low leakage

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Dahlquist, F ^a,b   Svedberg, J O ^c   Zetterling, C M ^b   Ostling M ^b   Breitholtz, B ^a,b   Lendenmann, H ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; ELECTRIC RECTIFIERS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE MEASUREMENT;

JUNCTION BARRIER SCHOTTKY (JBS) DIODES;

SILICON CARBIDE;

EID: 0342572423     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

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2. R. Held, N. Kaminski, E. Niemann, Mat. Science Forum Vols.264-268 (1998), 1057-1060
3. B.J. Baliga, Solid-State Electron. 28 (1985), p. 1089.
4. B.J. Baliga, IEEE Electron Device Letters 5 (1984), p. 194.
5. J. Crofton and S. Sriram, IEEE Trans. Electron Devices 43 (1996), p. 2305.
6. W.J. Schaffer, G.H. Negley, K.G. Irvine, and J.W. Palmour, Mat. Res. Soc. Symp. Proc. 339 (1994), p. 595.