An implanted-emitter 4H-SiC bipolar transistor with high current gain

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 119-120

  Tang, Yi ^a,b   Fedison, Jefferey B ^a,b   Paul Chow, T ^a,b  

^a IEEE   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Bipolar transistors; Current control; Power semiconductor devices; Switching transient

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; EMITTER CURRENT; POWER SEMICONDUCTOR DEVICES; SWITCHING TRANSIENT;

CURRENT DENSITY; ELECTRIC CURRENT CONTROL; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; NEGATIVE TEMPERATURE COEFFICIENT; SILICON CARBIDE; TEMPERATURE;

BIPOLAR TRANSISTORS;

EID: 0035279392     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910614     Document Type: Article

References (6)

1. Significantly improved performance of MOSFETs on silicon carbide using the 4H-SiC polytype
2. SiC and GaN high-voltage power switching devices
3. Mechanisms limiting current gain in SiC bipolar junction transistors
4. 1800 V, 3.8 a bipolar junction transistor in 4H-SiC
5. Wide bandgap semiconductor high-voltage power switching transistors
6. Characterization of phosphorus implantation in 4H-SiC