1500 V, 4 Amp 4H-SiC JBS diodes

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 101-104

  Singh, R ^a   Ryu, S H ^a   Palmour, J W ^a   Hefner, A R ^a   Lai, J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Rectifier; Reverse recovery; Schottky; SiC

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC CONVERTERS; ELECTRIC LOSSES; ELECTRIC RECTIFIERS; ELECTRIC VARIABLES MEASUREMENT; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SWITCHING; WAVEFORM ANALYSIS;

BLOCKING VOLTAGE; REVERSE RECOVERY TIME;

SCHOTTKY BARRIER DIODES;

EID: 0034449020     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)