SCOPUS 정보 검색 플랫폼

Volumn 76, Issue 16, 2000, Pages 2310-2312

High rate etching of 4H-SiC using a SF6/O2 helicon plasma

b THALES (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001167037 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.126329 Document Type: Article

Times cited : (57)

References (14)

1
- 0004062139
- Academic Verlag
- Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology, edited by W. J. Choyke, H. Matsunami, and G. Pensl (Academic Verlag, 1997).
- (1997) Silicon Carbide: A Review of Fundamental Questions and Applications to Current Device Technology
- Choyke, W.J.¹ Matsunami, H.² Pensl, G.³

2
- 21544433623
- R. Padiyath, R. L. Wright, M. I. Chaudhry, and S. V. Babu, Appl. Phys. Lett. 58, 1053 (1991).
- (1991) Appl. Phys. Lett. , vol.58 , pp. 1053
- Padiyath, R.¹ Wright, R.L.² Chaudhry, M.I.³ Babu, S.V.⁴

3
- 0030144647
- J. B. Casady, E. D. Luckowski, M. Bozack, D. Sheridan, R. W. Johnson, and J. R. Williams, J. Electrochem. Soc. 143, 1750 (1996).
- (1996) J. Electrochem. Soc. , vol.143 , pp. 1750
- Casady, J.B.¹ Luckowski, E.D.² Bozack, M.³ Sheridan, D.⁴ Johnson, R.W.⁵ Williams, J.R.⁶

4
- 0000142386
- G. F. McLane and J. R. Flemish, Appl. Phys. Lett. 68, 3755 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3755
- McLane, G.F.¹ Flemish, J.R.²

5
- 21544464120
- K. Xie, J. R. Flemish, J. H. Zhao, W. R. Buchwald, and L. Casas, Appl. Phys. Lett. 67, 368 (1995).
- (1995) Appl. Phys. Lett. , vol.67 , pp. 368
- Xie, K.¹ Flemish, J.R.² Zhao, J.H.³ Buchwald, W.R.⁴ Casas, L.⁵

6
- 5844317505
- G. McDaniel, J. W. Lee, E. S. Lambers, S. J. Pearton, P. H. Holloway, F. Ren, J. M. Grow, M. Bhaskaran, and R. G. Wilson, J. Vac. Sci. Technol. A 15, 885 (1997).
- (1997) J. Vac. Sci. Technol. A , vol.15 , pp. 885
- McDaniel, G.¹ Lee, J.W.² Lambers, E.S.³ Pearton, S.J.⁴ Holloway, P.H.⁵ Ren, F.⁶ Grow, J.M.⁷ Bhaskaran, M.⁸ Wilson, R.G.⁹

7
- 0032329867
- J. J. Wang, E. S. Lambers, S. J. Pearton, M. Ostling, C. M. Zetterling, J. M. Grow, F. Ren, and R. J. Shul, J. Vac. Sci. Technol. A 16, 2204 (1998).
- (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 2204
- Wang, J.J.¹ Lambers, E.S.² Pearton, S.J.³ Ostling, M.⁴ Zetterling, C.M.⁵ Grow, J.M.⁶ Ren, F.⁷ Shul, R.J.⁸

8
- 22844454573
- P. Leerungnawarat, D. C. Hays, H. Cho, S. J. Pearton, R. M. Strong, C.-M. Zetterling, and M. Östling, J. Vac. Sci. Technol. B 17, 2050 (1999).
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 2050
- Leerungnawarat, P.¹ Hays, D.C.² Cho, H.³ Pearton, S.J.⁴ Strong, R.M.⁵ Zetterling, C.-M.⁶ Östling, M.⁷

9
- 0000725696
- F. A. Khan and I. Adesida, Appl. Phys. Lett. 75, 2268 (1999).
- (1999) Appl. Phys. Lett. , vol.75 , pp. 2268
- Khan, F.A.¹ Adesida, I.²

10
- 85037508754
- Kyoto, Japan, Ser. No. 142, Chap. 37
- M. G. Rastegaeva, A. N. Andreev, V. V. Zelenin, A. I. Babanin, I. P. Nikitina, V. E. Chelnokov, and V. P. Rastegacv, Silicon Carbide and related Materials, International Physics Conference, Kyoto, Japan, Ser. No. 142, 1995, Chap. 37.
- (1995) Silicon Carbide and Related Materials, International Physics Conference
- Rastegaeva, M.G.¹ Andreev, A.N.² Zelenin, V.V.³ Babanin, A.I.⁴ Nikitina, I.P.⁵ Chelnokov, V.E.⁶ Rastegacv, V.P.⁷

11
- 85037500801
- PhD thesis, Orsay University
- P. Chabert, PhD thesis, Orsay University, 1999.
- (1999)
- Chabert, P.¹

12
- 0032332258
- P. Chabert, R. W. Boswell, and C. Davis, J. Vac. Sci. Technol. A 16, 78 (1998).
- (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 78
- Chabert, P.¹ Boswell, R.W.² Davis, C.³

13
- 5244340635
- R. W. Boswell, Phys. Lett. A 33, 457 (1970).
- (1970) Phys. Lett. A , vol.33 , pp. 457
- Boswell, R.W.¹

14
- 0032659380
- T. E. Sheridan, P. Chabert, and R. W. Boswell, Plasma Sources Sci. Technol. 8, 457 (1999).
- (1999) Plasma Sources Sci. Technol. , vol.8 , pp. 457
- Sheridan, T.E.¹ Chabert, P.² Boswell, R.W.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.