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Volumn 45, Issue 7, 1998, Pages 1595-1604

Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

Author keywords

High voltage; Reverse leakage current; Schottky barrier rectifiers; Silicon carbide

Indexed keywords

DESIGN; NICKEL; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TITANIUM;

EID: 0032121583     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.701494     Document Type: Article
Times cited : (218)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.