Temperature stable Pd ohmic contacts to p-type 4H-S1C formed at low temperatures

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 605-611

  Kassamakova, Liliana ^a   Kakanakov, Roumen D ^a   Kassamakov, Ivan V ^a   Nordell, Nils ^b   Savage, Susan ^b   Hjörvarssön, Bjorgvin ^c   Svedberg, Erik B ^c   Abom, Lisa ^d   Madsen, Lynnette D ^d  

^a Central Laboratory of Applied Physics Bulgarian Academy of Sciences   (Bulgaria)

^b ACREO AB   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Ohmic contact; Silicon carbide; Thermal stability

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; LEAD; OHMIC CONTACTS; SILICON CARBIDE; THERMODYNAMIC STABILITY; VOLTAGE MEASUREMENT;

TRANSMISSION LINE MODELS (TLM);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033099025     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748885     Document Type: Article

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