Fabrication and characterization of 4H-SiC GTOs and diodes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Fursin, L ^a   Tone, K ^a   Alexandrov, P ^a   Luo, Y ^a   Cao, L ^a   Zhao, J ^a   Weiner, M ^b   Pan, M ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ETCHING; ION IMPLANTATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS; THYRISTORS;

JUNCTION TERMINATION EXTENSION (JTE); MESA TERMINATION;

SILICON CARBIDE;

EID: 0033687293     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. nd Intl. Conf. AECV. June 8-12, 1997, Dearborn, MI USA, pp. 13-19.
2. J. W. Palmour et al., Trans. 3rd Intl. Conf. High Temperature Electronics (HiTEC), Albuquerque, NM, June 9-14, 1996, Vol.2, pp.XVI-9-14.
3. B. Li, etal, IEEE Electron Devices Lett. Vol.20, No.5, 1999, pp219-222.
4. N. Ramungual, et al., IEEE T-ED Vol.46,No.3,1999,pp493-496.