High-voltage operation of field-effect transistors in silicon carbide

IEEE Electron Device Letters

Volumn 18, Issue 11, 1997, Pages 521-522

  Konstantinov, A O ^a   Ivanov, P A ^b   Nordell, N ^c   Karlsson, S ^c   Harris, C I ^c  

^a ABB CORPORATE RESEARCH   (Sweden)

^b IOFFE INSTITUTE   (Russian Federation)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THYRISTORS;

BLOCKING VOLTAGES; DRAIN CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 0031272335     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641432     Document Type: Article

References (7)

1. J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter, Jr., "Vertical power devices in silicon carbide," Inst. Phys. Conf. Ser. vol. 137, p. 499, 1994.
2. A. K. Agrawal, R. R. Siergiej, S. S. Seshandri, M. H. White, P. G. McMullin, A. A. Burk, L. B. Rowland, C. D. Brandt, and R. H. Hopkins, "A critical look at the performace advantages and limitations of 4H-SiC power UMOSFET structures," in Proc. 8th Int. Symp. Power Semicond. Devices and 1C's, 1996, p. 119.
3. G. Kelner, S. Binari, M. Shur, K. Sieger, J. Palmour, and S. Kong. "Alpha-SiC buried-gate junction field-effect transistors," Mater. Sci. Eng. B, vol. 11 p. 121, 1992.
4. P. A. Ivanov, A. A. Maltsev, V. N. Panteleev, T. P. Samsonova, A. Yu. Maksimov, N. K. Yushin, and V. E. Chelnokov. "4H-SiC field-effect transistor hetero-epitaxially grown on 6H-SiC substrate by sublimation," Inst. Phys. Conf. Ser., vol. 142, p. 757, 1996.
5. D. Alok and B. J. Baliga, "High-voltage (450 V) 6H-SiC substrate gate JFET (SG-JFET)," Inst. Phys. Conf. Ser. vol. 142, p. 749, 1996.
6. P. G. Neudeck, D. J. Larkin, J. A. Powell, L. G. Matus, and C. S. Salupo, "2000 V 6H-SiC p-n junction diodes grown by chemical vapor epitaxy," Appl. Phys. Lett. vol. 64, p. 1386, 1994.
7. A. P. Dmitriev, A. O. Konstantinov, D. P. Litvin, and V. I. Sankin, "Impact ionization and superlattice in 6H-SiC," Sov. Phys. Semicond. vol. 17, p. 686, 1983.