Recent progress in SiC microwave MESFETs

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 15-22

  Allen, S T ^a   Sheppard, S T ^a   Pribble, W L ^a   Sadler, R A ^a   Alcorn, T S ^a   Ring, Z ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ENERGY GAP; MESFET DEVICES; MICROWAVE DEVICES; MONTE CARLO METHODS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; TRANSCONDUCTANCE;

CHANNEL DOPING; ELECTRON VELOCITY; KNEE VOLTAGE; POWER ADDED EFFICIENCY; RF POWER DENSITY; SOURCE RESISTANCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033323749     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-15     Document Type: Conference Paper

References (4)

1. R.P. Joshi, J. Appl. Phys. 78, 5518 (1995).
2. G.A Slack, J. Appl. Phys. 35, 3460 (1964).
3. C.E. Weitzel, J.W. Palmour, C.H. Carter, Jr., K.J. Nordquist, Elect. Dev. Let. 15, 406 (1994).
4. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, J. W. Palmour, L. T. Kehias, T. J. Jenkins, 56th Annual Device Research Conference, 1998.