Experimental demonstration of a silicon carbide IMPATT oscillator

IEEE Electron Device Letters

Volumn 22, Issue 6, 2001, Pages 266-268

  Yuan, Luo ^b   Cooper Jr , James A ^a,b   Melloch, Michael R ^a,b   Webb, Kevin J ^a,b  

^a IEEE   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

IMPATT diodes; Microwave generation; Silicon carbide (SIC)

Indexed keywords

MICROWAVE GENERATION; WAVEGUIDE CAVITIES;

CURRENT VOLTAGE CHARACTERISTICS; IMPACT IONIZATION; MICROWAVE OSCILLATORS; SILICON CARBIDE; THERMAL CONDUCTIVITY; WAVEGUIDES;

IMPATT DIODES;

EID: 0035365052     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.924837     Document Type: Article

References (9)

1. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
2. SIC for applications in high-power electronics
3. Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation
4. Titanium and aluminum-titanium ohmic contacts to P-type SIC
5. Millimeter-wave pulsed IMPATT sources
6. Measurement of high-field electron transport in silicon carbide
7. + avalanche diodes