Novel high power AlGaN/GaN HFETs on SiC substrates

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 565-568

  Gaska, R ^a   Yang, J ^a   Osinsky, A ^a   Khan, M Asif ^a   Shur, M S ^a  

^a APA Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

THERMAL IMPEDANCE;

ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THERMODYNAMIC PROPERTIES; TRANSCONDUCTANCE;

GATES (TRANSISTOR);

EID: 84886448001     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)