Anomalously high density of interface states near the conduction band in SiO2/4H-SiC MOS devices

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Das, Mrinal K ^a   Um, Benjamin S ^a   Cooper Jr , James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; ELECTRIC CONDUCTANCE; ELECTRON SCATTERING; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; INTERFACES (MATERIALS); SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON CARBIDE;

CONDUCTION BAND; INTERFACE STATES;

MOSFET DEVICES;

EID: 18844470144     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)

1. L. A. Lipkin and J. W. Palmour, J. Electron. Materials 25 (1996), p. 909.
2. M. K. Das, et al., "Effect of Implant Activation Annealing Conditions on the Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs," Electronic Mat'ls Conf., Santa Barbara, CA, June 30 - July 2, 1999.
3. M. K. Das, et al. "Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs," Semiconductor Interface Specialists Conf., San Diego, CA, December 3 - 5, 1998.
4. R. Schörner, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electron Device Lett. 20 (1999), p. 241.
5. E. H. Nicollian and A. Goetzberger, Bell System Tech. J. 46 (1967), p. 1055.
6. M. K. Das, J. A. Cooper, Jr., and M. R. Melloch, J. Electron. Materials 27 (1998), p. 353.
7. S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices 27 (1980), p. 1497.
8. M. M. Maranowski and J. A. Cooper, Jr., IEEE Trans. Electron Devices 46 (1999), p. 520.
9. V. R. Vathulya and M. H. White, "Characterization of Channel Mobility on Implanted SiC to Determine Polytype Suitability for the Power DIMOS Structure," IEEE Device Research Conf., Santa Barbara, CA, June 28-30, 1999.