A 16W, 40% efficient, continuous wave, 4H SiC, L-band SIT

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 141-143

  Clarke, R C ^a   Morse, A W ^a   Esker, P ^a   Curtice, W R ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b WR Curtice Consulting   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ENERGY GAP; GATES (TRANSISTOR); MICROWAVE DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

L-BAND TRANSISTOR; PARASITIC CAPACITANCE; STATIC INDUCTION TRANSISTOR; WIDE BANDGAP TRANSISTOR;

TRANSISTORS;

EID: 0034593557     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. "The Mixed Mode 4H-SiC SIT as an S-Band Microwave Power Transistor", R. C. Clarke, A. K. Agarwal, R. R. Siergiej, C. D. Brandt, A. W. Morse, DRC 1996.
2. "Application of High Power Silicon Carbide Transistors At Radar Frequencies," A. W. Morse, P. M. Esker, R. C. Clarke, C. D. Brandt, R. R. Siergiej, and A. K. Agarwal, IEEE MTT-S Digest, pp. 677-680, 1996.