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Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages 247-252

Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization

(4) Danielsson, E a Lee, S K a Zetterling, C M a Ostling M a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

ICP; Schottky contacts; Silicon carbide

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; FAILURE ANALYSIS; INDUCTIVELY COUPLED PLASMA; OXIDATION; PLASMA ETCHING; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS;

CURRENT VOLTAGE MEASUREMENT; SCHOTTKY CONTACTS;

SILICON CARBIDE;

EID: 0035272934 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0024-0 Document Type: Article

Times cited : (28)

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