High n-type antimony dopant activation in germanium using laser annealing for n+/p junction diode

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 838-840

  Thareja, G ^a   Chopra, S ^b   Adams, B ^b   Kim, Y ^b   Moffatt, S ^b   Saraswat, K ^a   Nishi, Y ^a  

^a Stanford University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Activation; antimony; donor; dopant; germanium; junction; n MOSFET; n type

Indexed keywords

DONOR; DOPANT; JUNCTION; N-TYPE; NMOSFET;

DIODES; DOPING (ADDITIVES); ION IMPLANTATION; MOSFET DEVICES; TUNNEL DIODES;

GERMANIUM;

EID: 79959776270     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2142410     Document Type: Article

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