Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing

Journal of the Electrochemical Society

Volumn 152, Issue 12, 2005, Pages

  Poon, Chyiu Hyia ^a   Tan, Leng Seow ^a   Cho, Byung Jin ^a   Du, An Yan ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; DIFFUSION; PHOSPHORUS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SILICA; TEMPERATURE DISTRIBUTION;

DOPANT LOSS MECHANISM; SOLID-STATE DIFFUSION;

GERMANIUM;

EID: 30344465782     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2073048     Document Type: Article

References (7)

1. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Appl. Phys. Lett., 83, 3275 (2003).
2. C. Jasper, L. Rubin, C. Lindfors, K. S. Jones, and J. Oh, in Proceedings of Ion Implantation Techniques, p. 548, IEEE (2002).
3. H. Shang, K.-L. Lee, F. Kozlowski, C. D. Emic, I. Babich, E. Sikorski, M. Ieong, H.-S. P. Wong, K. Guarini, and W. Haensch, IEEE Electron Device Lett., 25, 135 (2004).
4. S. T. Ahn, H. W. Kennel, W. A. Tiller, and J. D. Plummer, J. Appl. Phys., 65, 2957 (1989).
5. S. Uppal, A. F. W. Willoughby, J. M. Bonar, A. G. R. Evans, N. E. B. Cowern, R. Morris, and M. O. Dowsett, J. Appl. Phys., 90, 4293 (2001).
6. S. Matsumoto and T. Niimi, J. Electrochem. Soc., 125, 1307 (1978).
7. Y. Hayafuji, K. Kajiwara, and S. Usui, J. Appl. Phys., 53, 8639 (1982).