A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Sueoka, Koji ^a   Kamiyama, Eiji ^a   Kariyazaki, Hiroaki ^a  

^a OKAYAMA PREFECTURAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ARRHENIUS EQUATION; DENSITY FUNCTIONAL THEORY CALCULATIONS; DIFFUSION OF VACANCIES; EFFECT OF PRESSURE; EXTERNAL PRESSURES; FORMATION ENERGIES; FORMATION ENTHALPY; INTERNAL PRESSURE; INTRINSIC POINT DEFECTS; PRESSURE DEPENDENCE; REDUCED PRESSURE; SI CRYSTALS; SINGLE-CRYSTAL SI; SUPER CELL; THERMAL EQUILIBRIUMS;

CRYSTAL GROWTH FROM MELT; DENSITY FUNCTIONAL THEORY; ENTHALPY; HYDROSTATIC PRESSURE; POINT DEFECTS; SILICON; SILICON WAFERS; THERMAL STRESS; VACANCIES;

SINGLE CRYSTALS;

EID: 84864205671     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4712632     Document Type: Article

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