Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Ioannou, N ^a,b   Skarlatos, D ^b   Tsamis, C ^a   Krontiras, C A ^b   Georga, S N ^b   Christofi, A ^c   McPhail, D S ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b UNIVERSITY OF PATRAS   (Greece)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; GERMANIUM; PHOSPHORUS; SILICON;

ARRHENIUS LAWS; DOSE LOSS; LOSS RATES;

SUBSTRATES;

EID: 51749107674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2981522     Document Type: Article

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