Radiation-induced defect reactions in tin-doped Ge crystals

Solid State Phenomena

Volumn 178-179, Issue , 2011, Pages 392-397

  Markevich, V P ^a   Peaker, A R ^a   Hamilton, B ^a   Litvinov, V V ^b   Pokotilo, Yu M ^b   Petukh, A N ^b   Lastovskii, S B ^c   Coutinho, J ^d   Rayson, M J ^e   Briddon, P R ^f  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d UNIVERSITY OF AVEIRO   (Portugal)

^e LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^f NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Ab initio modeling; Energy levels; Ge: Sn; Tin vacancy defects

Indexed keywords

ACTIVATION ENERGY; ATOMS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALS; HOLE TRAPS; PHOSPHORUS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY; TIN; VACANCIES; BINARY ALLOYS; DEFECTS; ELECTRON ENERGY LEVELS; GERMANIUM;

AB INITIO; AB-INITIO MODELING; ACCEPTOR LEVELS; DENSITY FUNCTIONAL MODELING; EFFECTIVE INTERACTIONS; ELECTRICALLY ACTIVE DEFECTS; ENERGY LEVEL; HIGH THERMAL STABILITY; HOLE EMISSION; IMPURITY ATOMS; ISOCHRONAL ANNEALING; MEV-ELECTRONS; PHOSPHORUS ATOM; RADIATION INDUCED DEFECTS; ROOM TEMPERATURE; SN-DOPED; TEMPERATURE RANGE; THERMAL-ANNEALING; THERMALLY STABLE; TIN ATOMS; TIN-VACANCY DEFECTS; TRANSIENT CAPACITANCE; TRANSIENT ENHANCED DIFFUSION; AB INITIO MODELING; TIN VACANCIES;

GERMANIUM; TIN COMPOUNDS;

EID: 80053289696     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.178-179.392     Document Type: Conference Paper

References (21)

1. A.R. Peaker, V.P. Markevich, B. Hamilton, I.D. Hawkins, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, E. Simoen, and N.V. Abrosimov, Thin Solid Films 517 (2008) 152-154.
2. A.J.R. da Silva, A. Janotti, A. Fazzio, R.J. Baierle, and R. Mota, Phys. Rev. B 62, (2000) 9903-9906.
3. A. Fazzio, A. Janotti, A.J.R. da Silva, and R. Mota, Phys. Rev. B 61 (2000) R2401-R2404.
4. H.M. Pinto, J. Coutinho, V.J.B. Torres, S. Öberg and P.R. Briddon, Mater. Sci. Semicond. Process. 9 (2006) 498-502.
5. S. Uppal, A.F.W. Willoughby, J.M. Bonar, N.E.B. Cowern, T. Grasby, R.J.H. Morris and M.G. Dowsett, J. Appl. Phys. 96 (2004) 1376-1380.
6. H. Bracht and S. Brotzman, Mater. Sci. Semicond. Process. 9 (2006) 471-476.
7. M. Koike, Y. Kamata, T. Ino, D. Hagishima, K. Tatsumura, M. Koyama, and A. Nishiyama, J. Appl. Phys. 104 (2008) 023523-(1-5).
8. P. Tsouroutas, D. Tsoukalas, I. Zergioti, N. Cherkashin, and A. Claverie, Mat. Sci. Semicond. Processing 11 (2008) 372-377.
9. A. Brelot, in: J.E. Whitehouse (Ed.), Radiation Damage and Defects in Semiconductors, Conference Series No 16, Institute of Physics, London and Bristol, 1973, pp. 191-201.
10. G.D. Watkins, Phys. Rev. B 12 (1975) 4383-4390.
11. V.P. Markevich, A.R. Peaker, B. Hamilton, V.V. Litvinov, Yu.M. Pokotilo, S.B. Lastovskii, J. Coutinho, A. Carvalho, M.J. Rayson, and P.R. Briddon, J. Appl. Phys. 109 (2011) 083705-(1-6).
12. L. Dobaczewski, A.R. Peaker, and K. Bonde Nielsen, J. Appl. Phys. 96 (2004) 4689-4728.
13. V.P. Markevich, A.R. Peaker, V.V. Litvinov, V.V. Emtsev, and L.I. Murin, J. Appl. Phys. 95 (2004) 4078-4083.
14. M.J. Rayson and P.R. Briddon, Comp. Phys. Commun. 178 (2008) 128-134.
15. J.P. Perdew and Y. Wang, Phys. Rev. B 45 (1992) 13244-13249.
16. C. Hartwigsen, S. Goedecker and J. Hutter, Phys. Rev. B 58 (1998) 3641-3662.
17. J. Coutinho, S. Öberg, V.J.B. Torres, M. Barroso, R. Jones and P.R. Briddon, Phys. Rev. B 73 (2006) 235213-(1).
18. E. Simoen, P. Clauws, G. Huylebroeck and J. Vennik, Semicond. Sci. Tech. 2 (1987) 507-512.
19. C.E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, and A. Nylandsted Larsen, Appl. Phys. Lett. 87 (2005) 172103-(1-3).
20. V.P. Markevich, I.D. Hawkins, A.R. Peaker, K.V. Emtsev, V.V. Emtsev, V.V. Litvinov, L.I. Murin, and L. Dobaczewski, Phys. Rev. B 70 (2004) 235213-(1-7).
21. A. Chroneos, R.W. Grimes, B.P. Uberuaga, and H. Bracht, Phys. Rev. B 77 (2008) 2352083- (1-7).