Tin-vacancy complex in germanium

Journal of Applied Physics

Volumn 109, Issue 8, 2011, Pages

  Markevich, V P ^a   Peaker, A R ^a   Hamilton, B ^a   Litvinov, V V ^b   Pokotilo, Yu M ^b   Lastovskii, S B ^c   Coutinho, J ^d   Carvalho, A ^d   Rayson, M J ^e   Briddon, P R ^f  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^d UNIVERSITY OF AVEIRO   (Portugal)

^e LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^f NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ACCEPTOR LEVELS; CO-DOPED; DENSITY FUNCTIONAL MODELING; DIVACANCIES; ELECTRICALLY ACTIVE DEFECTS; HOLE EMISSION; HYBRID STATE; MEV-ELECTRONS; PHOSPHORUS ATOM; TEMPERATURE RANGE; TRANSIENT CAPACITANCE; VACANCY COMPLEXES;

ACTIVATION ENERGY; ATOMS; CRYSTAL ATOMIC STRUCTURE; CRYSTALS; ELECTRONIC STRUCTURE; GERMANIUM; PHOSPHORUS; POWER QUALITY; VACANCIES;

TIN;

EID: 79955740450     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3574405     Document Type: Article

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