Diffusion of phosphorus implanted in germanium

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 68-71

  Canneaux, Th ^a   Mathiot, D ^a   Ponpon, J P ^a   Roques, S ^a   Schmitt, S ^a   Dubois, Ch ^b  

^a Faculté de Médecine   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Diffusion; Doping and impurity implantation; Germanium; Ion implantation; Phosphorus

Indexed keywords

ANNEALING; BUDGET CONTROL; GERMANIUM; ION IMPLANTATION; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE;

B-Y IONS; DIFFUSION EXPERIMENTS; DISTRIBUTION PROFILES; DOPING AND IMPURITY IMPLANTATION; GERMANIUMS (GE); HIGH PURITY GERMANIUMS; HIGH THERMAL; IONS IMPLANTATION; SECONDARY ION MASS SPECTROSCOPY; THERMAL BUDGET;

DIFFUSION;

EID: 56949092492     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.08.004     Document Type: Article

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